TCAD models of the temperature and doping dependence of the bandgap and low field carrier mobility in 4H-SiC

Temperature dependence of the energy gap in semiconductors

Y. P. Varshni · Physica · 1967 · 5.3K citations

Semiconductors, Semiconductor Technology, Engineering +4

Carrier mobilities in silicon empirically related to doping and field

D.M. Caughey, R.E. Thomas · Proceedings of the IEEE · 1967 · 1.7K citations

Device Modeling, Semiconductor Technology, Electrical Engineering +13

Measurements of bandgap narrowing in Si bipolar transistors

J.W. Slotboom, H.C. de Graaff · Solid-State Electronics · 1976 · 750 citations

Electrical Engineering, Bandgap Narrowing, Engineering +3

Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

M. Roschke, Frank Schwierz · IEEE Transactions on Electron Devices · 2001 · 348 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12

Doping in III-V Semiconductors

E. F. Schubert · MRS Proceedings · 1994 · 331 citations

Semiconductors, Electrical Engineering, Engineering +5