A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices

GaN-Based RF Power Devices and Amplifiers

Umesh K. Mishra, Likun Shen, T.E. Kazior et al. · Proceedings of the IEEE · 2008 · 1.8K citations

Engineering, Electrical Engineering, Materials Science +17

A new empirical nonlinear model for HEMT and MESFET devices

I. Angelov, Herbert Zirath, N. Rosman · IEEE Transactions on Microwave Theory and Techniques · 1992 · 548 citations

Engineering, Electrical Engineering, Microelectronics +16

A new approach to solving the cubic: Cardan’s solution revealed

R. W. D. Nickalls · The Mathematical Gazette · 1993 · 389 citations

Natural Sciences, Mathematics, Physics +6

High Al-content AlGaN/GaN MODFETs for ultrahigh performance

Yifeng Wu, B.P. Keller, P. Fini et al. · IEEE Electron Device Letters · 1998 · 280 citations

Engineering, Electrical Engineering, Materials Science +17

A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices

Sourabh Khandelwal, Nitin Goyal, Tor A. Fjeldly · IEEE Transactions on Electron Devices · 2011 · 221 citations

Engineering, Electrical Engineering, Physics +17