Epitaxial regrowth of Sb implanted Si1−<i>x</i>Ge<i>x</i> alloy layers

Abstract

Solid phase epitaxial regrowth of Sb implanted strained Si1−xGex alloy layers is reported. A set of Si0.92Ge0.08 alloys, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at an energy of 200 keV and a dose of 1015 ions/cm2. These alloys were annealed in a RTA system at temperatures of 525, 550, and 575 °C for durations between 30 s and 10 min. Backscattering (channeling) measurements show an increase in the regrowth rate compared to furnace annealed Sb implanted (100)Si. Hall effect measurements show an increase in the carrier concentration as the amorphous/crystalline interface propagates to the surface. The concentration reaches a maximal value which exceeds the maximum solid solubility of Sb in Si at the annealing temperature by a factor of six. There is a reverse annealing tendency for longer annealing times.