GaAs light-emitting diodes fabricated on Ge-coated Si substrates

Abstract

Light-emitting diodes have been fabricated in GaAs grown by metalorganic chemical vapor deposition on vapor-deposited epitaxial Ge films on Si substrates. The light-emitting junction was formed by zinc diffusion into the n-type GaAs layer. Room-temperature light emission centered at 872 nm has been observed.