Applied Physics Letters · 1984 · 84 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionIii-v SemiconductorsLight-emitting DiodesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsEpitaxial Thin FilmsLight Emission SpectraLight-emitting DevicesLight-emitting MaterialsMetalorganic Chemical Vapor DepositionSemiconductor Light-emitting Materials
Light-emitting diodes have been fabricated in GaAs grown by metalorganic chemical vapor deposition on vapor-deposited epitaxial Ge films on Si substrates. The light-emitting junction was formed by zinc diffusion into the n-type GaAs layer. Room-temperature light emission centered at 872 nm has been observed.
5
Heteroepitaxy of vacuum-evaporated Ge films on single-crystal Si
B-Y. Tsaur, M. W. Geis, John C. C. Fan et al. · Applied Physics Letters · 1981 · 72 citations
Heteroepitaxial growth of Ge on 〈111〉 Si by vacuum evaporation
M. Garozzo, G. Conte, F. Evangelisti et al. · Applied Physics Letters · 1982 · 26 citations · Full text