Effect of deposition and annealing temperature on properties of ZAO/Cu/ZAO multilayers

Abstract

Transparent conductive multilayers consisting of a Cu layer sandwiched between Al doped zinc oxide layers were fabricated on conventional glass substrates by direct current magnetron sputtering. The effect of deposition and annealing temperature on the properties of these multilayers was investigated. The multilayer deposited at 100°C owned the maximum figure of merit of 2·65×10−2 Ω−1 with an average transmittance of 86·64% and a resistivity of 9·72×10−3 Ω cm. The crystallinity and photoelectric properties of multilayers were improved by post annealing treatment. The multilayer deposited at 100°C and post-annealed at 400°C resulted with a resistivity of 8·64×10−3 Ω cm and an average transmittance of 88·33%, and the figure of merit achieved to 3·61×10−2 Ω−1.