Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis

Abstract

Sapphire (α-Al2O3) single crystals grown using the Verneuil and Kyropoulos methods have been analyzed using electron paramagnetic resonance and γ-ray spectroscopy with 12-MeV bremsstrahlung excitation. It is established that uncontrolled impurities in the final sapphire single crystals grown by the Kyropoulos method in molybdenum-tungsten crucibles are supplied both from the initial materials and from the furnace and crucible materials