Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobe

Abstract

We have measured Raman spectra of a diamond film prepared on the (111) surface of cubic boron nitride(c-BN) by the dc plasma chemical vapor deposition method. The polarization property of the Raman line of diamond agrees well with that of LO phonon for the (111) surface of c-BN. The agreement between the polarization property of Raman lines of diamond and c-BN indicates a possibility of the heteroepitaxial growth of the diamond film on the (111) surface of c-BN. It is found that the diamond layers on c-BN are under tensile stress of 2.2×1011 dyn/cm2. The value of the corresponding tensile strain agrees well with the lattice mismatch calculated from the lattice constants of c-BN and diamond, supporting the possibility of the heteroepitaxial growth of the diamond film. Raman spectroscopy is a powerful technique not only to estimate the stress in the diamond film but also to determine the crystallographic orientation.