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Near room temperature continuous-wave laser operation from type-I interband transitions at wavelengths beyond 4 μm
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Citations
28
References
2010
Year
Optical MaterialsQuantum PhotonicsEngineeringLaser ScienceLaser PhysicsLaser ApplicationsLaser MaterialOptoelectronic DevicesHigh-power LasersSemiconductorsSemiconductor LasersOptical PropertiesCompound SemiconductorOptical PumpingPhotonicsPhysicsOptoelectronic MaterialsLaser ClassificationRoom TemperatureAdvanced Laser ProcessingApplied PhysicsNonradiative Auger RecombinationTunable LasersType-i Interband TransitionsQuantum Photonic DevicePbsrse BarriersOptoelectronics
Nonradiative Auger recombination has limited room temperature continuous-wave (cw) operation of type-I interband lasers to wavelengths shorter than 3.36 μm. Using IV–VI semiconductor quantum well microdisk structures, near room temperature laser operation at longer wavelengths is achieved. Their active region consists of type-I single quantum wells of PbSe embedded in PbSrSe barriers. Under optical excitation, single mode cw emission at 4.3 μm is demonstrated up to 2 °C. This proves the feasibility of cw-operation of long wavelength interband lasers up to room temperature.
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