Luminescence imaging for inline characterisation in silicon photovoltaics

Abstract

Abstract Luminescence imaging is a very rapid technique for the characterisation of silicon samples. Megapixel luminescence images on silicon bricks, unprocessed wafers, partially processed wafers and fully processed cells can be captured with acquisition times of typically a few seconds or less than one second. A number of specific luminescence imaging applications have been developed over the last three years, allowing quantitative spatial information to be gained about a variety of crucial material and device parameters. This paper reviews some of the intriguing possibilities for inline monitoring in PV production at an early stage of production that result from the above mentioned short measurement times. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)