Japanese Journal of Applied Physics · 2005 · 11 citations · 13 references
EngineeringCrystal Growth TechnologyDefect ToleranceDefect StatesQuantum MaterialsPhotoluminescence SpectraMaterials SciencePhotoluminescenceHeater MethodCrystalline DefectsPhysicsCrystal MaterialDefect FormationCrystallographyCuins 2Natural SciencesSpectroscopyApplied PhysicsCondensed Matter Physics
The defect-related donor-acceptor pair emissions in photoluminescence spectra of CuInS 2 crystals grown by the traveling heater method have been investigated to characterize the defects in the crystals. The energy levels of donors have been deduced to be 36 and 63–69 meV. Acceptors have been estimated to lie much deeper with energy levels at 113, 150, 180 and 220 meV. The origin of the donor and acceptor levels is discussed.
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