Effect of growth potential on the electrodeposition of CIS thin films

Vishakha N. Dhanwate, Nandu B. Chaure

Applied Nanoscience · 2012 · 19 citations · 14 references

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Abstract

Thin films of copper indium diselenide (CIS) were prepared in aqueous bath by low-cost potentiostatic electrodeposition technique onto Fluorine doped tin oxide substrates. The deposition potential was optimized using cyclic voltammetry study in a ternary Cu–In–Se system. The films were characterized systematically with the aid of UV–Vis spectroscopy, IV measurements, X-ray diffraction, Scanning electron microscopy and Energy dispersive X-ray analysis. CIS films deposited for different growth potential shows the tetragonal structure with (112) preferential orientation. Annealing of the films at temperature 400°C not only improves the crystallinity of layers, but it also increases the grain size, which is suitable for the development of high efficiency solar cells.

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14