Crystal Research and Technology · 2005 · 21 citations · 12 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptical MaterialsOpticsAnisotropic MaterialsElectronic Band StructureOptical Properties Of MaterialsOptical Properties Of SemiconductorsOptical Properties Of SolidsSelection RulesAnisotropyCrystal OpticsInterband TransitionsOptical AnisotropyOptical PropertiesPolarizationPolarization Selection RulesReflectivity
Abstract Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k ⟂ c) and parallel to the c‐axis (k // c). Peak position of the PL emission band and the onset of the transmission have been found to be significantly different for these two cases. This observed anisotropy is related to anisotropic band structure and the selection rules for the optical absorption in layered GaSe. FTIR transmission spectrum is in good agreement with PL results. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Crystal structure and interatomic distances in GaSe
A. Kuhn, A. Chévy, R. Chevalier · physica status solidi (a) · 1975 · 291 citations
Optical anisotropy in layer compounds
Wen‐Miin Liang · Journal of Physics C Solid State Physics · 1973 · 137 citations