Crystal structure and interatomic distances in GaSe

Abstract

After a comparison of the β-, ϵ-, γ-, and δ-type GaSe crystal structures, the different interlayer interactions are discussed. New values for the intralayer interatomic distances Se–Ga = 2.463 (15) Å, Ga–Ga = 2.457 (18) Å, and the interlayer distance Se–Se = 3.880 (15) Å are proposed. These are mean values for the δ-type determined with a higher accuracy than the previous ones, relevant to the ϵ- and γ-type structure. The influence of the growth method on crystal type and dislocation density are discussed.