Epitaxial growth of BGaAs and BGaInAs by MOCVD

New group III-group V compounds: BP and BAs

J. A. Perri, S. La Placa, B. Post · Acta Crystallographica · 1958 · 138 citations · Full text

Natural Sciences, Chemistry, Inorganic Chemistry +7

Electronic structure of BAs and boride III-V alloys

Gus L. W. Hart, Alex Zunger · Physical review. B, Condensed matter · 2000 · 119 citations · Full text

Natural Sciences, Materials Science, Physics +17

The Preparation and Properties of Boron Phosphides and Arsenides¹

Forrest V. Williams, Robert A. Ruehrwein · Journal of the American Chemical Society · 1960 · 114 citations

Natural Sciences, Chemistry, Materials Science +7

BGaInAs alloys lattice matched to GaAs

John F. Geisz, Daniel J. Friedman, J. M. Olson et al. · Applied Physics Letters · 2000 · 102 citations

Natural Sciences, Materials Science, Physics +17

The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxy

G. B. Stringfellow · Journal of Crystal Growth · 1986 · 89 citations

Engineering, Materials Engineering, Materials Science +14