Publication | Closed Access
Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition
34
Citations
15
References
2010
Year
Materials ScienceMgzno/zno Quantum WellsIi-vi SemiconductorOptical MaterialsEngineeringPhotoluminescencePhysicsOxide ElectronicsApplied PhysicsQuantum MaterialsZno EmissionPulsed Laser DepositionInterface AbruptnessOptoelectronicsStrong QuantumNanophotonicsSemiconductor Nanostructures
A strong quantum confined Stark effect (QCSE) was observed in wedge shaped MgZnO/ZnO quantum wells (QWs) grown by pulsed laser deposition. A reduced laser fluence of 1.8 J/cm2 was used. Reference samples grown at higher standard fluence 2.4 J/cm2 showed only a negligible QCSE. Using off-axis deposition without substrate rotation, a constant composition of the barriers was maintained while varying the well width in a wedge shaped QW. A redshift of the QW luminescence with increasing QW thickness up to 230 meV below the ZnO emission was found, accompanied by an increase in the exciton lifetime from 0.3 ns up to 4.2 μs.
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