Doping uniformity and geometry of LSA oscillator diodes

Abstract

For maximum dc to RF power conversion efficiency, the dc and RF electric-field amplitudes must be properly related throughout the volume of a limited space-charge accumulation (LSA) diode. Space-charge due to a few percent fluctuation in the relative doping can distort the electric field enough to reduce the maximum attainable efficiency. Standing-wave effects with the diode limit the width in the direction of wave propagation to about 0.04 free-space wavelengths.