Achievement of 17.5% efficiency with 30 × 30cm<sup>2</sup>-sized Cu(In,Ga)(Se,S)<inf>2</inf> submodules

Abstract

The efficiency of 17.8% on a 30 × 30cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -sized Cu(In,Ga)(Se,S) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (CIS)-based thin-film submodule was achieved. The device structure is same as our previous works; monolithically integrated CIS-based cells on a Mo-deposited glass substrate with a Zn(O, S, OH) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> buffer and a ZnO window. Current Progress was mainly brought by review of the band profile of the absorber layer. More specifically, fine tuning of the grading of Ga/(Ga+In) and S/(Se+S) ratio turned out to improve the value of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> × J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</sub> by a factor of as much as three percent.