<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> x-ray topographic observation of dislocation behavior in In-doped GaAs crystals

Abstract

This letter describes the results of in situ observations of dislocation behavior in In-doped GaAs crystals at high temperatures using synchrotron radiation topography and high-temperature stressing apparatus. The generation and propagation processes of dislocations in a preyield stage have been investigated by making a comparison with undoped crystals. We find that there is a one-directional predominance in the generation and propagation of dislocations in In-doped crystals.