High Performance Ambipolar Field‐Effect Transistor of Random Network Carbon Nanotubes

Abstract

Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm2/V·s) with a high on/off ratio (106). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.