Influence of impurity and phonon scattering effects in resonant tunneling structures

Abstract

Tunneling properties and their temperature variations of molecular bean epitaxy grown symmetric AlAs/GaAs/AlAs resonant tunneling diodes with thin barriers are studied theoretically and experimentally. The measured peak and valley current densities show strong dependences on temperature. A Monte Carlo simulation including impurity and optical-phonon scatterings is developed for the calculation of the current-voltage behavior of the double barrier structures. This approach reveals pronounced temperature dependent tunneling features which agree well with measured results.