Single-junction GaAsP solar cells grown on SiGe graded buffers on Si

Abstract

We have investigated the microstructure and device characteristics of GaAs0.82P0.18 solar cells grown on Si0.20Ge0.80/Si graded buffers. Anti-phase domains (APDs) were largely self-annihilated within the In0.39Ga0.61P initiation layer although a low density of APDs was found to propagate to the surface. A combination of techniques was used to show that the GaAs0.82P0.18 cells have a threading dislocation density of 1.2 ± 0.2 × 107 cm−2. Despite these extended defects, the devices exhibited high open-circuit voltages of 1.10–1.12 V. These results indicate that cascading a GaAs0.82P0.18 top cell with a lower-bandgap Si0.20Ge0.80 cell is a promising approach for high-efficiency dual-junction devices on low-cost Si substrates.