Interface States in Abrupt SiO<sub>2</sub>/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters - Concepedia

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Interface States in Abrupt SiO<sub>2</sub>/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters

12

Citations

5

References

2004

Year

Toshiharu Ohnuma, Hidekazu Tsuchida, Tamotsu Jikimoto

Materials science forum

EngineeringPhysicsInterface StatesSi Dangling BondsChemical BondApplied PhysicsCondensed Matter PhysicsInterface StructureAbrupt SioInterface Phenomenon

References

	Year	Citations

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