Control of III–V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness - Concepedia

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Control of III–V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness

17

Citations

5

References

1996

Year

Monique S. Gaffney, C.M. Reaves, Roy S. Smith, A.L. Holmes, Steven P. DenBaars

Journal of Crystal Growth

Materials ScienceChemical EngineeringEngineeringSource Flow ControlIii–v EpitaxySurface ScienceApplied PhysicsChemical DepositionMolecular Beam EpitaxyEpitaxial GrowthChemical Vapor DepositionThin Film Processing

References

	Year	Citations

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