660 nm wavelength GaInAsP/AlGaAs distributed feedback lasers

Abstract

GaInAsP/AlGaAs distributed feedback (DFB) lasers emitting at 660 nm were fabricated by liquid phase epitaxy for the first time. DFB mode oscillation in a single longitudinal mode was observed in the temperature range from 22°C to −24°c and in the current range up to 1.25 times the threshold (here, the output power was 5 mW). The temperature dependence of lasing wavelength was as small as 0.04 nm/deg.