Reduced gain of ion−implanted transistors

Abstract

Ion implantation is increasingly being used as a deposition technique because of the good uniformity and reproducibility that can be obtained with it. In this letter it is reported that lower gains of bipolar transistors can result from this use of implantation rather than diffusion for depositions. The degradation of gain is shown to be a lifetime effect associated with crystal damage. A technique for avoiding the degradation is described.