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Photo-EPR experiments on defects in irradiated silicon
35
Citations
4
References
1976
Year
EngineeringCrystalline DefectsPhysicsOptical PropertiesSpectroscopyPhoto-epr ExperimentsApplied PhysicsNatural SciencesElectron Paramagnetic ResonanceElectron SpectroscopyDefect FormationDefect ToleranceDefect Electrical LevelsSpectroscopic PropertyBand GapSilicon Debugging
Abstract The defect electrical levels for eight EPR spectra (Si-A10, -A14, -A15, -A16, -G7, -G16, -P2, -P4) are determined from optical bleaching experiments via electron paramagnetic resonance. The defect energy levels are all located near the middle of the band gap in between Ec ∼ 0.40 eV and Eu + 0.40 eV.
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