Frequency locking of an InGaAsP semiconductor laser to the first overtone vibration-rotation lines of hydrogen fluoride

Abstract

The first overtone vibration-rotation lines of hydrogen fluoride have been observed around the wavelength region of 1.3 μm by using a current-tunable InGaAsP semiconductor laser operated at the temperature range from −24 °C to +24 °C. The laser frequency has been locked to one of the R-branch lines with the stability of 2.0×10−10≥σ(2,τ)≥7.9×10−11 at the averaging time between 1 and 240 s.