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Spectroscopic characterization of fluorinated silicon single crystal surfaces
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1984
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Low Fluorine DosesSurface CharacterizationComparative SiEngineeringCrystalline DefectsSurface ChemistrySpectroscopic CharacterizationSpectroscopySurface ScienceApplied PhysicsCondensed Matter PhysicsNatural SciencesSurface AnalysisPhysical ChemistrySif IdentificationChemistrySilicon On InsulatorCrystallography
Spectroscopic studies of Si(100) fluorinated by the dissociative chemisorption of XeF2 at 80 K are reported. LEED and XPS measurements suggest the formation of a disordered fluorosilyl layer after low fluorine doses. Separate EELS experiments identified a fluorine induced 800 cm−1 loss, suggesting that SiF is the major surface fluorosilyl species. Vibrational evidence for coadsorbed hydrogen, due to side reactions during fluorination, is also found. Recent synchrotron soft x-ray photoemission spectra support the SiF identification and also demonstrate dramatic crystallographic effects in comparative Si(111) studies.