Hydrogen-arsenic interactions in MOVPE-grown CdTe: effects of rapid thermal annealing

Self-compensation through a large lattice relaxation in <i>p</i>-type ZnSe

D. J. Chadi, K. J. Chang · Applied Physics Letters · 1989 · 118 citations

Electrical Engineering, Quantum Lattice System, Engineering +15

Column V acceptors in ZnSe: Theory and experiment

D. J. Chadi · Applied Physics Letters · 1991 · 78 citations

Localized Excited State, Engineering, Electronic Properties +17

Phosphorus and Arsenic Impurity Centers in ZnSe. II. Optical and Electrical Properties

A. R. Reinberg, W. C. Holton, M. de Wit et al. · Physical review. B, Solid state · 1971 · 75 citations

Optical Materials, Engineering, Chemistry +19

Novel technique for <i>p</i>-type nitrogen doped ZnSe epitaxial layers

N. R. Taskar, B. Khan, D. Dorman et al. · Applied Physics Letters · 1993 · 64 citations

Semiconductors, Materials Science, Ii-vi Semiconductor +13

A comparative study of laser and furnace annealing of P+ implanted CdTe

C. Uzan, R. Legros, Y. Marfaing · Journal of Crystal Growth · 1985 · 24 citations

Materials Engineering, Materials Science, Advanced Laser Processing +8