Synthesis Of Nitrogen-Doped Graphene Films For Lithium Battery Application

TLDR

The study aims to grow nitrogen‑doped graphene directly on copper current collectors and evaluate its reversible lithium‑ion intercalation performance. Nitrogen‑doped graphene layers were synthesized by liquid‑precursor CVD on copper and characterized by Raman, TEM, and XPS. The N‑doped graphene exhibited nearly twice the reversible discharge capacity of pristine graphene, and its direct growth on current collectors demonstrates a viable, efficient route for battery manufacturing.

Abstract

We demonstrate a controlled growth of nitrogen-doped graphene layers by liquid precursor based chemical vapor deposition (CVD) technique. Nitrogen-doped graphene was grown directly on Cu current collectors and studied for its reversible Li-ion intercalation properties. Reversible discharge capacity of N-doped graphene is almost double compared to pristine graphene due to the large number of surface defects induced due to N-doping. All the graphene films were characterized by Raman spectroscopy, transmission electron microscopy, and X-ray photoemission spectroscopy. Direct growth of active electrode material on current collector substrates makes this a feasible and efficient process for integration into current battery manufacture technology.