A study of the surface passivation on GaAs and In/sub 0.53/Ga/sub 0.47/As Schottky-barrier photodiodes using SiO/sub 2/, Si/sub 3/N/sub 4/ and polyimide

Abstract

Studies of surface passivation and antireflection coating on GaAs and In/sub 0.53/Ga/sub 0.47/As interdigitated metal-semiconductor-metal (IMSM) Schottky-barrier photodiodes have been made using SiO/sub 2/, Si/sub 3/N/sub 4/, and polyimide deposited films. The results show that Si/sub 3/N/sub 4/ on GaAs and polyimide on In/sub 0.53/Ga/sub 0.47/As are the most effective dielectric films for reducing the leakage current and reflection loss in these photodiodes.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>