Ultraviolet-sensitive field-effect transistor utilized amorphous thin films of organic donor/acceptor dyad

Abstract

The authors report on highly responsive ultraviolet (UV)-sensitive field-effect transistor based on amorphous thin films of organic donor/acceptor dyad. An optimal responsivity of up to 6.5A∕W can be obtained for UV light at 370nm. High ratios of photocurrent to dark current of up to 4.3×103 can also be obtained. The underlying mechanism can be sufficiently explained by ultrafast photoinduced intramolecular charge transfer between the acceptor and the donor. This result offers a potential application of organic semiconductors as active materials for UV detectors.