Applied Physics Letters · 1992 · 69 citations · 26 references
Categoryquantum ElectronicsEngineeringSize DependenceOptoelectronic DevicesThermal BroadeningSemiconductorsOptical PropertiesQuantum MaterialsCompound SemiconductorBulk GaasSemiconductor TechnologyQuantum SciencePhysicsQuantum DeviceExciton LinewidthApplied PhysicsCondensed Matter PhysicsPhononFundamental Absorption EdgeOptoelectronics
We have studied the temperature dependence of the linewidth, Γ(T), of the fundamental absorption edge in bulk GaAs and four GaAs/Ga0.7Al0.3As single quantum wells of different well width using photoreflectance. As a result of the size dependence of the exciton-longitudinal optical phonon interaction, the thermal broadening of the linewidth diminishes as the dimensionality and size of the system are reduced.
26