Molecular dynamics modelling and simulation of nanoscale ductile cutting of silicon

Abstract

A simulation system for nanoscale ductile mode cutting of monocrystalline silicon has been developed in thi study using the Molecular Dynamics (MD) method for better understanding of the ductile mode cutting mechanism. In the model of this simulation system, the initial atom positions of silicon workpiece material are arranged according to the crystal lattice structure, the atomic interactive actions of silicon are based on the Tersoff potential, the diamond cutting tool is assumed to be undeformable, the tool cutting edge is realistically modelled to have a finite radius, and the motions of the atoms in the chip formation zone are determined by Newton's equations of motion. The simulated variation of the cutting forces with the tool cutting edge radius is compared with the results of experimental cutting tests to substantiate the developed simulation system and the results show a good agreement with analytical findings.