Subnanosecond bimolecular non-radiative recombination in a-Si:H

Non-radiative transitions in semiconductors

A. M. Stoneham · Reports on Progress in Physics · 1981 · 360 citations

Semiconductors, Defect Tolerance, Semiconductor Technology +13

Non‐Radiative Transitions in Semiconductors

P. T. Landsberg · physica status solidi (b) · 1970 · 158 citations

Optical Studies of Excess Carrier Recombination in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi></mml:math>-Si: H: Evidence for Dispersive Diffusion

Z. Valy Vardeny, P. O’Connor, Shaumik Ray et al. · Physical Review Letters · 1980 · 107 citations

Transient Grating, Optical Materials, Engineering +22

The properties of free carriers in amorphous silicon

P. M. Fauchet, D. Hulín, R. Vanderhaghen et al. · Journal of Non-Crystalline Solids · 1992 · 85 citations · Full text

Optical Materials, Engineering, Relaxation Time +16

Ultrafast recombination and trapping in amorphous silicon

K. Seibert, H. Kurz, Gregory N. Parsons et al. · Journal of Non-Crystalline Solids · 1989 · 26 citations

Physics, Applied Physics, Semiconductor Device Fabrication +3