A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

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Materials Science, Non-volatile Memory, Electrical Engineering +15

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

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Materials Science, Electrical Resistance, Material Analysis +6

Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface

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Oxide Heterostructures, Semiconductors, Electrical Engineering +15

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Simple Sandwich, Electrical Engineering, Non-volatile Memory +15