Tellurium Thin-Film Field-Effect Transistor Deposited on TGS Crystal

Abstract

A tellurium thin-film field-effect transistor is deposited onto a TGS crystal in vacuum. By switching the TGS crystal, the switching operation of the tellurium thin-film field-effect transistor from depletion to enhancement can be achieved. The conductance of the device is improved up to a ratio of 200 to 1 for ON to OFF states through the heating process in a dry argon atmosphere after fabrication. By the above heat treatment, the crystallization of the tellurium film is enhanced and states for trapping charges induced by the remanent polarization is reduced conveniently.