DX centres in CdZnTe:Cl and their applications

Deep donor levels (<i>D</i> <i>X</i> centers) in III-V semiconductors

P. M. Mooney · Journal of Applied Physics · 1990 · 860 citations

Semiconductors, Materials Science, Semiconductor Technology +15

Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors

D. V. Lang, R. A. Logan · Physical Review Letters · 1977 · 689 citations

Engineering, Semiconductors, Ii-vi Semiconductor +17

Adaptive optical networks using photorefractive crystals

Demetri Psaltis, David J. Brady, Kelvin Wagner · Applied Optics · 1988 · 448 citations · Full text

Holography, Optical Materials, Engineering +17

Bulk Lattice Instability in II-VI Semiconductors and Its Effect on Impurity Compensation

Chung Hyuk Park, D. J. Chadi · Physical Review Letters · 1995 · 98 citations

Engineering, Semiconductors, First-principles Pseudopotential Calculations +16

Non-Γ donor levels and kinetics of electron transfer in n-type CdTe

G.W. Iseler, J. A. Kafalas, A. J. Strauss et al. · Solid State Communications · 1972 · 95 citations

N-type Cdte, Engineering, Natural Sciences +9