Radiation damage in indium tin oxide (ITO) layers

Electron traps in bulk and epitaxial GaAs crystals

G. M. Martin, A. Mitonneau, A. Mircéa · Electronics Letters · 1977 · 730 citations

Wide-bandgap Semiconductor, Electrical Engineering, Epitaxial Growth +14

Spatial distribution of ions incident on solid target as a function of instantaneous energy

D.K. Brice · Radiation Effects · 1971 · 91 citations

Engineering, Physics, Instantaneous Energy +12

The Thermal Stability of Indium-Tin-Oxide/n-GaAs Schottky Contacts

D. V. Morgan, Y.H. Aliyu, R.W. Bunce · physica status solidi (a) · 1992 · 21 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

The Characterisation of Selective Proton Damage on GaAs Solar Cells

Y.H. Aliyu, D. V. Morgan, R.W. Bunce · physica status solidi (a) · 1993 · 19 citations

Engineering, Selective Proton Damage, Ion Beam Instrumentation +18

The effects of radiation damage on the properties of Ni-nGaAs Schottky diodes—I

Paul D. Taylor, D. V. Morgan · Solid-State Electronics · 1976 · 16 citations

Semiconductor Technology, Electrical Engineering, Engineering +4