Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2006 · 35 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesBipolar Junction TransistorsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesMicrowave Integrated CircuitsRadio-frequency Integrated CircuitsBreakdown VoltageHigh-frequency ElectronicsMicrowave Integrated Circuit DesignMonolithic Microwave Integrated CircuitsPhase NoiseRadio-frequency Integrated Circuit DesignTuningTuning Range
Integration of high voltage transistors and varactors with high tuning range into high frequency SiGe bipolar technologies is challenging due to the requirement of a shallow collector for the high speed transistor. This paper presents a high speed SiGe bipolar technology using a novel concept with two epitaxial layers for the simultaneous integration of high speed transistors, high voltage transistors, and varactors. Using this concept high speed transistors with 209 GHz cut-off frequency and 3.3 ps gate delay have been combined with high voltage transistors providing an emitter-collector breakdown voltage of 5 V. Additionally in this concept a varactor has been developed and optimized to achieve a high tuning range of 13 GHz and low phase noise for a 77 GHz VCO
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