Source-side injection Schottky barrier flash memory cells

Abstract

This work presents a novel Schottky barrier flash cell with promising source-side injection programming. The effects of the Schottky barrier on source-side injection programming are demonstrated by two-dimensional device simulations. The unique Schottky barrier at the source/channel interface significantly promotes the amount of source-side hot electrons to provide high injection efficiency at considerably low voltages without compromising between gate and drain biases. The new source-side injection Schottky barrier flash cell, which has a compact floating-gate structure with a metallic source/drain, is proposed for the first time as future flash memory.