Self-organization of wire-like InAs nanostructures on InP

Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy

Anne Ponchet, Alain Le Corre, H. L’Haridon et al. · Applied Physics Letters · 1995 · 193 citations

Semiconductors, Materials Science, Island Size +14

InAs self-assembled quantum dots on InP by molecular beam epitaxy

S. Fafard, Z. R. Wasilewski, J. P. McCaffrey et al. · Applied Physics Letters · 1996 · 185 citations

Engineering, Optoelectronic Devices, Luminescence Property +16

Surface evolution during molecular-beam epitaxy deposition of GaAs

J. Sudijono, Matthew D. Johnson, C. W. Snyder et al. · Physical Review Letters · 1992 · 149 citations

Materials Science, Surface Evolution, Engineering +13

Effects of As/P exchange reaction on the formation of InAs/InP quantum dots

Sukho Yoon, Youngboo Moon, Tae-Wan Lee et al. · Applied Physics Letters · 1999 · 119 citations

Engineering, Chemistry, Chemical Deposition +19

Kinetic surface roughening in molecular beam epitaxy of InP

M. A. Cotta, R. A. Hamm, Thomas W. Staley et al. · Physical Review Letters · 1993 · 117 citations

Materials Science, Materials Engineering, Surface Characterization +12