Japanese Journal of Applied Physics · 1979 · 18 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructurePhysical ChemistrySolid-state ChemistryCompositional SimulationCrystallization ProcessesEpitaxial GrowthPhase EquilibriaContinuous-process SimulationCrystal Growth ModelingEpitaxial Film GrowthEpitaxial Growth KineticsEquilibriumLiquid Phase EpitaxyLiquidus SurfacesTernary Compounds
A generalized calculation is presented to predict the variation of liquid and solid compositions during the liquid phase epitaxial growth from a ternary component solution under an equilibrium condition. Basic equations describing the fractional changes of liquid components are derived for the continuous process. Starting at a given initial condition the calculation based on an iterative procedure is carried out along on the theoretical liquidus surface with no adjustable parameters. The theory is applied to the growth of Ga 1- X Al X As as an example, resulting in good agreement with the experimental data.