Theoretical modeling of thermally activated luminescence quenching processes in Si:Er

Abstract

A theoretical description of processes responsible for thermally activated nonradiative relaxation of excited ${\mathrm{Er}}^{3+}$ ions in Si is developed. Microscopic models for the back transfer mechanism of excitation reversal and for Auger energy transfer to free and localized carriers are proposed. Simulations based on physical parameters are made and reasonable agreement with experiment is obtained. At the same time, the proposed theoretical treatment reveals aspects of the Auger deexcitation. In particular, important differences between interaction with free electrons and free holes are concluded. Experimental support for these findings is pointed out.