Growth peculiarities of gallium arsenide single crystals

Characteristics of the {111} Surfaces of the III–V Intermetallic Compounds

H. C. Gatos, M. C. Lavine · Journal of The Electrochemical Society · 1960 · 242 citations

Natural Sciences, Materials Engineering, Materials Science +15

Crystallographic Polarity in the II-VI Compounds

E. P. Warekois, M. C. Lavine, Anthony N. Mariano et al. · Journal of Applied Physics · 1962 · 238 citations

Natural Sciences, Materials Engineering, Materials Science +17

Indium antimonide—A review of its preparation, properties and device applications

K.F. Hulme, J.B. Mullin · Solid-State Electronics · 1962 · 154 citations

Natural Sciences, Materials Engineering, Materials Science +7

Production of Dislocations During Growth from the Melt

William A. Tiller · Journal of Applied Physics · 1958 · 112 citations

Natural Sciences, Materials Engineering, Materials Science +16

216th Electrochemical Society Meeting

尚斗 北村 · 粉体および粉末冶金 · 2010 · 99 citations

Natural Sciences, Chemistry, Materials Science +12