Insulating Tubular BN Sheathing on Semiconducting Nanowires

Ying-Chun Zhu, Yoshio Bando, Dongfeng Xue, Fang-Fang Xu, Dmitri Golberg

Journal of the American Chemical Society · 2003 · 50 citations · 12 references

Concepts

Abstract

An effective method was developed for generation of insulating tubular boron nitride (BN)-sheathed nanostructures. ZnS nanowires and multilayered Si-SiO2 nanowires were successfully sheathed with insulating tubular BN-forming nanocables. Both the semiconductor nanowire cores and the BN sheaths are crystalline with well-uniform morphologies.

References

12