X-Ray Photoelectron Spectroscopy of Fluorocarbon Films Deposited by RF Sputtering

Abstract

Fluorocarbon films are deposited by rf sputtering of poly(tetrafluoroethylene) targets under conditions of various power and pressure levels in pure argon in order to examine the effect of discharge conditions on the deposition rate and molecular structure of the deposited films. The molecular structures of the films are investigated by means of X-ray photoelectron spectroscopy. The films deposited under conditions favoring high deposition rate, such as higher power at a constant pressure or lower pressure at a constant power, contain higher concentrations of cross-links. Heating the deposited films results in an increase in the component of the C 1s spectrum assigned to the cross-linked structure.