Morphology of Microdefects in As-Grown Thinned Silicon Crystals Observed by Synchrotron X-Radiation Plane-Wave Topography

Abstract

In order to reveal more minute microdefects in as-grown CZ silicon crystals, thinned crystals as thin as the order of the extinction distance have been successfully observed by ultra plane-wave topography using synchrotron X-radiation. Various kinds of microdefects reveal themselves only in the thinned region. Using thinned crystals for plane-wave topography is essential for the present experiment. Observed morphologies of microdefects are classified into five categories. One of the observed microdefects has an image extinction rule suggesting a specified strain field around it. The morphology of microdefects has been described in detail.