Growth of carbon nanotubes with resist-assisted patterning process

Abstract

The authors developed a growth method for carbon nanotubes (CNTs) by using a resist-assisted patterning process. The CNTs can be grown directly on the patterned catalyst surface without a diffusion barrier. The growth-site patterns were fabricated on a nickel/silicon (Ni∕Si) substrate by a conventional lithography method using a photopatternable resist. The growth mechanism of the CNTs without diffusion barrier was confirmed by Raman spectroscopy and transmission-electron microscope measurement. The carbon-network formation during forming the process is a key parameter for CNT growth. The technique will be applicable to a low-cost fabrication process of electron-emitter arrays.