Growth of amorphous hydrogenated carbon nitride films in radio-frequency plasma

Abstract

Amorphous hydrogenated carbon nitride films are deposited both on the cathode and anode in N2–CH4 atmosphere by radiofrequency plasma chemical vapor deposition. The species of the plasma are detected by optical emission spectroscopy and ionization-threshold mass spectroscopy. The effects of varying the N2 partial pressure on plasma states and film properties have been investigated. The results of plasma diagnosis indicate that reactive nitrogen radicals are more easily generated than methane-derived radicals and they increase as the N2 partial pressure in plasma. The films grown on the cathode and anode definitely show different properties. It seems that CN and CNH species in plasma do not contribute to film growth directly. The efficient bombardment of nitrogen ions on growing surface leads to the formation of the film which has lower hydrogen content and more CN bond constructions.